Low-Tc three-terminal structures for new superconducting devices
Low-Tc three-terminal structures for new superconducting devices
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新型超导器件的低温三端结构
DOI：
10.1088/0953-2048/14/12/301
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
N. E. Booth
中科院分区：
文献类型：
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作者：
G. Pepe;R. Scaldaferri;L. Parlato;G. Peluso;C. Granata;M. Russo;G. Rotoli;N. E. Booth
基于准粒子注入在中间电极产生的非平衡态工作的三端超导器件在T = 4.2 K时具有类似晶体管的性能，是非常有前途的。以Nb/Al为中间电极的铌基堆叠双隧道结结构在T = 4.2 K时，当Al膜处于正常金属态时，可以产生较大的电流放大。在准粒子捕获晶体管的框架内讨论了实验结果。讨论了利用叠置双结结构研究薄超导双层层中邻近效应的可能性。特别是，堆叠器件对于确定有效界面耦合参数、态准粒子密度和双分子层两侧的库珀对势特别有用。Nb/Al界面参数的知识对于确定近似结构的非平衡行为非常有用。本文还介绍了叠置双约瑟夫森器件的稳态和脉冲特性测量。这些器件的触发器状态的可能性已经被证明。利用脉冲电子抽运作用下的扰动正弦-戈登模型，将实验结果与数值模拟结果进行了比较。
Three-terminal superconducting devices which operate on the basis of the non-equilibrium state produced in the intermediate electrode by quasi-particle injection are very promising for their transistor-like properties at T = 4.2 K. Nb-based stacked double-tunnel junction structures with Nb/Al as an intermediate electrode can produce large current amplification at T = 4.2 K when the Al film is in the normal metal state. Experimental results are discussed in the framework of the QUAsiparticle TRApping TRANsistor. The possibility of using a stacked double junction structure to study the proximity effect in thin superconducting bilayers is also discussed. In particular, the stacked devices are particularly useful for determining both the effective interface coupling parameters, the quasi-particle density of states and the Cooper pair potential at both sides of the bilayer. The knowledge of the Nb/Al interface parameters can be very useful for determining non-equilibrium behaviour of proximized structures. Measurements concerning the steady-state and pulsed characterizations of the stacked double Josephson devices are also presented. The possibility of a flip-flop state for these devices has been demonstrated. Experimental results are compared with numerical simulations based on the perturbed sine-Gordon model of the stack in the presence of pulsed electronic pumping.