Interface Modification in Organic Thin Film Transistors
Interface Modification in Organic Thin Film Transistors
复制标题
有机薄膜晶体管的界面改性
DOI：
10.1143/jjap.44.2783
复制
发表时间：
2004
影响因子：
1.5
通讯作者：
C. Chu
中科院分区：
文献类型：
--
作者：
Bo;Yan;Ming;An;Y. Chen;Y. Chiou;Y. Chiou;C. Chu
将十八烷基三氯硅烷(OTS)溶液与十六烷、甲苯和乙醇作为界面化学修饰剂，以提高有机薄膜晶体管(OTFT)的性能。改性后的有机薄膜晶体管的电学特性明显提高，尤其是迁移率、通断电流比和亚阈值斜率。从X射线衍射仪、接触角和原子力显微镜的测量数据可以看出，由于二氧化硅表面能的改变，有机薄膜的质量有所提高。在本报告中，最好的装置是在体积浓度为1%的OTS/甲苯或十六烷溶液中处理。
The octadecyltrichlorosilane (OTS) solutions with three solvents, hexadecane, toluene, and ethanol, were acted as the interface chemical modifiers to advance the characteristics of organic thin-film transistors (OTFTs). The electrical characteristics of the organic thin-film transistors with modification were obviously enhanced, especially in mobility, on/off current ratio and subthreshold slope. From the data of X-ray diffraction (XRD), contact angle and atomic force microscope (AFM) measurement, it could be understood that the quality of the organic thin film had been improved due to the change of silicon dioxide surface energy. In this report, the best device was been treated in the OTS/toluene or hexadecane solutions with 1% volume concentration.