Silicon Nitride Single-Layer X-Ray Mask
Silicon Nitride Single-Layer X-Ray Mask
复制标题
氮化硅单层 X 射线掩模
DOI：
10.1116/1.571854
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发表时间：
1981
影响因子：
1.5
通讯作者：
Y. Saitoh
中科院分区：
文献类型：
--
作者：
M. Sekimoto;H. Yoshihara;T. Ohkubo;Y. Saitoh
在低压化学气相沉积工艺中，研究了沉积温度和反应气体SiH_2Cl_2/NH_3比对低应力、低折射率氮化硅薄膜制备的影响。在850°C的成膜温度和4/1的SiH 2Cl 2/NH3比下形成应力为15 kg/mm 2且折射率为2.3的氮化硅膜。利用该薄膜作为X射线掩模，实现了具有30 ×30 mm窗口、对可见光具有高透过率的氮化硅单层X射线掩模。
In the low pressure chemical vapor deposition process, preparation of silicon nitride with low film stress and low refractive index is investigated as a function of deposition temperature and reactant gas ratio SiH2Cl2/NH3. The silicon nitride film with a stress of 15 kg/mm2 and refractive index of 2.3 is formed at the deposition temperature of 850°C and the SiH2Cl2/NH3 ratio of 4/1. Using the film as an X-ray mask, a silicon nitride single-layer X-ray mask is realized, which has a 30 ×30 mm window and has high transparency to visible light.