Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs
Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs
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DOI：
10.1063/1.3377915
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发表时间：
2010-04
影响因子：
4
通讯作者：
D. Suh;Y. Cho;Sun Wook Kim;D. Ko;Yongshik Lee;M. Cho;Jungwoo Oh
中科院分区：
文献类型：
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作者：
D. Suh;Y. Cho;Sun Wook Kim;D. Ko;Yongshik Lee;M. Cho;Jungwoo Oh
研究了 GaAs 上 HfO2 高 k 栅极电介质的热稳定性。与 HfO2 栅极电介质相比，通过构建 Al2O3/HfO2/Al2O3 电介质叠层，界面特性和电特性得到显着改善。在高温下，非晶态 Al2O3 层可有效抑制 HfO2 结晶。由于钝化 Al2O3 层可防止界面氧化物和陷阱电荷的形成，因此有助于降低等效氧化物厚度的增长率以及电容电压滞后。透射电子显微镜和 X 射线光电子能谱数据支持具有 Al2O3/HfO2/Al2O3 栅极电介质叠层的 GaAs 金属氧化物半导体电容器的电气特性得到改善。
Thermal stability of HfO2 high-k gate dielectric on GaAs is investigated. Compared to HfO2 gate dielectric, significant improvements in interfacial properties as well as electrical characteristics were found by constructing a Al2O3/HfO2/Al2O3 dielectric stack. At elevated temperatures, the amorphous Al2O3 layers were effective in inhibiting crystallization of HfO2. Since the passivating Al2O3 layers prevent interfacial oxide and trap charge formation, it aids in reducing the increasing rate of equivalent oxide thickness as well as capacitance-voltage hysteresis. Transmission electron microscopy and x-ray photoelectron spectroscopy data supported the improved electrical characteristic of GaAs metal-oxide-semiconductor capacitors with Al2O3/HfO2/Al2O3 gate dielectric stack.