Impact of the colloidal silica particle size on physical vapor deposition tungsten removal rate and surface roughness

Impact of the colloidal silica particle size on physical vapor deposition tungsten removal rate and surface roughness
复制标题

胶体二氧化硅粒径对物理气相沉积钨去除率和表面粗糙度的影响

DOI:
10.1116/1.1490393
复制
发表时间:
2002
影响因子:
1.4
通讯作者:
E. Jacquinot
E. Jacquinot
中科院分区:
工程技术4区
文献类型:
--
作者:
D. Bouvet;P. Beaud;P. Fazan;R. Sanjinés;E. Jacquinot

文献摘要

被引文献

相似文献

随着sub-0.25 μm工艺的发展,互连集成对表面质量和钨抛光层的粗糙度更加敏感。因此,氧化铝基浆料逐渐被硅基浆料(气相或胶体)所取代,其特点是颗粒更小、更软。与许多氧化铝基浆料的研究者相比,只有很少的研究进行了粒度对物理气相沉积(PVD)钨、PVD钛和热氧化物去除率以及抛光后表面粗糙度的影响。在本文中,我们评估了四种不同的胶体硅基浆料具有不同的粒径。我们发现最有前途的浆料是粒径最小的浆料。我们还表明,钨的去除率机制可能既不是划痕/压痕也不是表面接触型机制,而很可能是由孔道的生长动力学控制的机制。
With the development of sub-0.25 μm technologies, interconnect integration is more sensitive to the surface quality and to the roughness of tungsten-polished layers. Consequently, alumina-based slurries are progressively replaced by silica-based slurries (fumed or colloidal), characterized by much smaller and softer particles. In contrast to the many investigators of alumina-based slurries, only a few investigations have been carried out on the effect of the particle size on the physical vapor deposition (PVD) tungsten, PVD titanium, and thermal oxide removal rates and on the surface roughness after polishing. In this article, we evaluate four different colloidal silica-based slurries having different particle sizes. We find that the most promising slurry is the one with the smallest particle size. We also show that the tungsten removal rate mechanism is probably neither a scratching/indentation nor a surface contact type mechanism, but most likely a mechanism controlled by the growth kinetics of the pass...