Structuring of photosensitive material below diffraction limit using far field irradiation
Structuring of photosensitive material below diffraction limit using far field irradiation
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DOI：
10.1007/s00339-013-7945-3
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发表时间：
2013-08
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通讯作者：
N. S. Yadavalli;M. Saphiannikova;N. Lomadze;L. Goldenberg;S. Santer
中科院分区：
文献类型：
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作者：
N. S. Yadavalli;M. Saphiannikova;N. Lomadze;L. Goldenberg;S. Santer
本文报道了用原子力显微镜（AFM）研究含偶氮苯的光敏聚合物薄膜在光干涉图样照射下的形貌变化。我们已经开发了一个实验装置，包括AFM结合双光束干涉，使我们能够切换不同的偏振状态的两个干涉光束，同时扫描的聚合物薄膜的照明区域，获得相应的变化，在topographyin原位。通过这种方式，我们能够分析地形的变化如何与干涉图案内的电场矢量的变化相关。这是第一次，一个相当简单的实验方法，可以实现严格的分配。通过进行原位测量，我们发现，对于两个干涉光束的特定偏振组合[即SP（偏振，参与）偏振图案]，形貌形成仅具有干涉图案的一半周期的表面浮雕光栅。利用这一现象，我们能够制造的表面浮雕结构测量只有140 nm的特征，通过使用远场光学波长为491 nm。我们相信，这种相对简单的方法可能是非常有价值的，例如，在高通量下产生低于衍射极限的结构特征，这可能会显着有助于电子和光子工业中新的制造策略的搜索。
In this paper, we report onin-situatomic force microscopy (AFM) studies of topographical changes in azobenzene-containing photosensitive polymer films that are irradiated with light interference patterns. We have developed an experimental setup consisting of an AFM combined with two-beam interferometry that permits us to switch between different polarization states of the two interfering beams while scanning the illuminated area of the polymer film, acquiring corresponding changes in topographyin-situ. This way, we are able to analyze how the change in topography is related to the variation of the electrical field vector within the interference pattern. It is for the first time that with a rather simple experimental approach a rigorous assignment can be achieved. By performingin-situmeasurements we found that for a certain polarization combination of two interfering beams [namely for the SP (↕, ↔) polarization pattern] the topography forms surface relief grating with only half the period of the interference patterns. Exploiting this phenomenon we are able to fabricate surface relief structures with characteristic features measuring only 140 nm, by using far field optics with a wavelength of 491 nm. We believe that this relatively simple method could be extremely valuable to, for instance, produce structural features below the diffraction limit at high-throughput, and this could significantly contribute to the search of new fabrication strategies in electronics and photonics industry.