Lanthanum zirconate: A single buffer layer processed by solution deposition for coated conductor fabrication
Lanthanum zirconate: A single buffer layer processed by solution deposition for coated conductor fabrication
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DOI：
10.1557/jmr.2002.0319
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发表时间：
2002-09
影响因子：
2.7
通讯作者：
S. Sathyamurthy;M. Paranthaman;H. Zhai;H. Christen;P. M. Martin;A. Goyal
中科院分区：
文献类型：
--
作者：
S. Sathyamurthy;M. Paranthaman;H. Zhai;H. Christen;P. M. Martin;A. Goyal
采用低成本的溶胶-凝胶法在织构Ni和Ni-1.7%Fe-3%W（Ni-W）带材上制备了单层La 2 Zr 2 O 7（LZO）作为缓冲层，用于YBa 2Cu 3 O 7-δ（YBCO）涂层导体的生长。首次证明了这种单层缓冲层可用于YBCO的沉积，其临界电流密度（J _c）可与在相同衬底上采用CeO_2/YSZ/Y_2O_2三层膜获得的临界电流密度（J _c）相媲美，在77 K和自场条件下超过1 MA/cm ^2。研究了YBCO薄膜的特性以及J _c随LZO层厚度的变化关系。
A single layer of La_2Zr_2O_7 (LZO), deposited on textured Ni and Ni–1.7% Fe–3% W (Ni–W) tapes by a low-cost sol-gel process, is used as buffer layer for the growth of YBa_2Cu_3O_7−δ (YBCO) coated conductors. It is shown for the first time that such single buffer layers can be used for the deposition of YBCO yielding critical current densities ( J _c) that are comparable to those typically obtained using CeO_2/YSZ/Y_2O_2 trilayers on identical substrates, i.e., in excess of 1 MA/cm^2 at 77 K and self-field. The properties of the YBCO films and the dependence of J _c on thickness of the LZO layer are investigated.