Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions
Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions
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二维材料/BiFeO3异质结中的铁电阻变行为
DOI：
10.1039/c8nr05408h
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发表时间：
2018-12-28
期刊：
影响因子：
6.7
通讯作者：
Zhen, Liang
中科院分区：
文献类型：
--
作者：
Li, Yang;Sun, Xue-Yin;Zhen, Liang
由于其固有特性之间的耦合，将二维（2D）材料与铁电薄膜集成可能会产生独特的特性和新颖的应用。在这里，我们观察到石墨烯/BFO 和 MoS2/BFO 异质结中的铁电电阻开关行为，该行为源于铁电极化引起的异质界面接触势垒和耗尽宽度的调制。此外，石墨烯/BFO和MoS2/BFO中的铁电电阻切换行为都取决于相应2D材料的厚度，因为2D材料的厚度相关的功函数或电导率可能会改变2D材料和铁电体界面处的接触势垒高度和宽度。我们的研究结果将拓宽2D/铁电异质结的忆阻应用，并为未来基于2D/3D材料异质结构的新型存储器件提供途径。
Integrating two-dimensional (2D) materials with ferroelectric thin films may result in unique characteristics and novel applications due to the coupling between their intrinsic characters. Here, we observed the ferroelectric resistive switching behavior in both graphene/BFO and MoS2/BFO heterojunctions, which stems from the modulation of contact barriers and depletion width at the hetero-interface induced by the ferroelectric polarization. Besides, the ferroelectric resistive switching behavior in both graphene/BFO and MoS2/BFO depends on the thicknesses of the corresponding 2D materials, because the thickness-dependent work function or conductivity of 2D materials could change the contact barrier heights and widths at the interface of 2D materials and ferroelectrics. Our results will widen the memristive applications of 2D/ferroelectrics hetero-junctions and provide a pathway for the novel memory devices based on hetero-structures with 2D/3D materials in the future.