Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
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DOI：
10.1143/jjap.50.020206
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发表时间：
2011-02
影响因子：
1.5
通讯作者：
T. Okumura;Daisuke Kondo;H. Ito;Seunghun Lee;T. Amemiya;N. Nishiyama;S. Arai
中科院分区：
文献类型：
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作者：
T. Okumura;Daisuke Kondo;H. Ito;Seunghun Lee;T. Amemiya;N. Nishiyama;S. Arai
采用两步有机金属气相外延（OMVPE）方法在半绝缘InP衬底上制备了横向结波导型GaInAsP/InP光电探测器。在1500 nm和1550 nm处获得了0.9A/W和0.27A/W的响应度。在无偏置条件下，实现了6 GHz的3 dB带宽和6 Gbps的无差错工作，条带宽度为1.4 µm，器件长度为220 µm。
A lateral junction waveguide-type GaInAsP/InP photodetector was fabricated on a semi-insulating InP substrate by two-step organometallic vapor-phase epitaxy (OMVPE) regrowth. Responsivities of 0.9 A/W at 1500 nm and 0.27 A/W at 1550 nm were obtained. A 3-dB bandwidth of 6 GHz and 6-Gbps error-free operation under non-bias conditions were achieved with a stripe width of 1.4 µm and a device length of 220 µm.