An X-ray photoelectron spectroscopy study of the oxides of GaAs
An X-ray photoelectron spectroscopy study of the oxides of GaAs
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DOI：
10.1016/s0169-4332(01)00583-9
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发表时间：
2001-11-12
影响因子：
6.7
通讯作者：
Sullivan, JL
中科院分区：
文献类型：
--
作者：
Surdu-Bob, CC;Saied, SO;Sullivan, JL
在本文中，通过使用X射线光电子能谱，我们明确地确定存在于GaAs表面上的氧化物，并准确地测量结合能与2 p（3/2），3d，和俄歇线在X射线光电子能谱。这些测量旨在为进一步的工作提供可靠的参考数据。我们对Ga金属和氧化物粉末参比样品的氧化态进行了广泛的分析。暴露在空气中的GaAs晶片和经过各种表面处理（氩等离子体处理和沸腾）的晶片。基于这一实验证据，提出了分配的光电子峰的各种化学状态。(C)出版社：Elsevier Science B. V.
In this paper, by the use of X-ray photoelectron spectroscopy, we unequivocally identify the oxides present on GaAs surfaces and accurately measure the binding energies associated with the 2p(3/2), 3d, and Auger lines in the X-ray photoemission spectra. These measurements intended to provide reliable reference data for further work. We conducted an extensive analysis of the oxidation states of Ga metal and oxide powder reference samples. air exposed GaAs wafers, and wafers subjected to various surface treatments (argon plasma treatments and boiling). Based on this experimental evidence, an assignment of the photoelectron peaks to various chemical states is proposed. (C) 2001 Published by Elsevier Science B.V.