Magnetoresistance of spin valve structures based on the full Heusler alloy Co2MnSi
Magnetoresistance of spin valve structures based on the full Heusler alloy Co2MnSi
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基于全Heusler合金Co2MnSi的自旋阀结构的磁阻
DOI：
10.1063/1.2213352
复制
发表时间：
2006
影响因子：
3.2
通讯作者：
Z. Barber
中科院分区：
文献类型：
--
作者：
L. Singh;C. Leung;C. Bell;J. Prieto;Z. Barber
Co2MnSi∕Cu∕Co 赝自旋阀 (PSV) 是通过直流磁控管溅射从元素靶材生长到 GaAs(001) 上的。化学计量的 Heusler 层具有高度纹理化，遵循晶格匹配的 GaAs(001) 的 [001] 取向。磁滞回线显示两个铁磁层的磁化强度独立切换。样品的传输测量在平面内电流 (CIP) 和垂直于平面 (CPP) 几何形状中进行。对于 CIP PSV、传统图案台面 CPP 器件和在聚焦离子束显微镜中制造的 CPP 器件，在 15K 下观察到清晰的低场自旋阀贡献。 CPP 数据的分析并未显示出理论预期的 Co2MnSi 的半金属行为。
Co2MnSi∕Cu∕Co pseudo-spin-valves (PSVs) have been grown by dc magnetron sputtering from elemental targets onto GaAs(001). The stoichiometric Heusler layer was highly textured, following the [001] orientation of the lattice matched GaAs(001). Hysteresis loops showed independent switching of the magnetization of the two ferromagnetic layers. Transport measurements of the samples were performed in both the current in plane (CIP) and current perpendicular to plane (CPP) geometries. Clear low-field spin valve contributions were observed at 15K for the CIP PSV, a conventionally patterned mesa CPP device and a CPP device fabricated in the focused ion beam microscope. Analysis of the CPP data did not show the half-metallic behavior of Co2MnSi as expected from theory.
C_o2Mn_l-xFe_xSn合金的自旋极化
DOI：
--
发表时间：
2007
期刊：
影响因子：
--
作者：
A. Rajanikanth;D. Kande; Y. K. Takahashi and K Hono;中谷友也;S. Varaprasad;T.M. Nakatani;中谷友也;A. Rajanikanth
通讯作者：
A. Rajanikanth