Fabrication of High-Performance Ultrathin In2O3 Film Field-Effect Transistors and Biosensors Using Chemical Lift-Off Lithography
Fabrication of High-Performance Ultrathin In2O3 Film Field-Effect Transistors and Biosensors Using Chemical Lift-Off Lithography
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DOI：
10.1021/acsnano.5b01211
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发表时间：
2015-04-01
期刊：
影响因子：
17.1
通讯作者：
Weiss, Paul S.
中科院分区：
文献类型：
--
作者：
Kim, Jaemyung;Rim, You Seung;Weiss, Paul S.
我们展示了直接制造的高灵敏度的生物传感器阵列的基础上的场效应晶体管，使用高效的高通量，大面积的图案化过程。化学剥离光刻技术被用来构造场效应晶体管阵列，具有高的空间精度，适用于微米和纳米级器件的制造。溶胶-凝胶工艺用于存款纳米（类似于4nm）的In_2O_3薄膜作为半导体沟道层。水溶胶凝胶工艺通过简单的旋涂在大面积上产生厚度为几纳米的均匀In2O3涂层，并且仅需要对涂层进行低温热退火。的In2O3使高灵敏度和高选择性的生物传感器的建设，通过固定化的特定适配子，以亚纳摩尔浓度的多巴胺被证明。
We demonstrate straightforward fabrication of highly sensitive biosensor arrays based on field-effect transistors, using an efficient high-throughput, large-area patterning process. Chemical lift-off lithography is used to construct field-effect transistor arrays with high spatial precision suitable for the fabrication of both micrometer- and nanometer-scale devices. Sol gel processing is used to deposit ultrathin (similar to 4nm) In2O3 films as semiconducting channel layers. The aqueous sol gel process produces uniform In2O3 coatings with thicknesses of a few nanometers over large areas through simple spin-coating, and only low-temperature thermal annealing of the coatings is required. The ultrathin In2O3 enables construction of highly sensitive and selective biosensors through immobilization of specific aptamers to subnanomolar concentrations of dopamine is demonstrated.