Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor
Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor
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DOI：
10.1063/1.122695
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发表时间：
1998-11-23
影响因子：
4
通讯作者：
Kim, EK
中科院分区：
文献类型：
--
作者：
Choi, BH;Hwang, SW;Kim, EK
研制了一种基于硅自组装量子点的量子点晶体管。该器件在室温下的漏极电流呈现阶梯状和振荡。这些数据被解释为由于单电子隧穿通过位于源极和漏极之间的最短电流路径中的点。从该数据计算出的点尺寸与7 nm相似，这与晶体管中包含的自组装点的尺寸一致。(C)1998年美国物理学会。[S0003-6951（98）02147-0]。
A quantum-dot transistor based on silicon self-assembled quantum dots has been fabricated. The device shows staircases and oscillations in the drain current at room temperature. These data are interpreted as due to single electron tunneling through the dots located in the shortest current path between the source and the drain electrodes. The dot size calculated from the data is similar to 7 nm, which is consistent with the size of the self-assembled dots incorporated in the transistor. (C) 1998 American Institute of Physics. [S0003-6951(98)02147-0].