CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
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具有高室温峰谷比的 CaF2/CdF2 双势垒谐振隧道二极管
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
N. Sakamaki
中科院分区：
文献类型：
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作者：
Masahiro Watanabe;T. Funayama;T. Teraji;N. Sakamaki
我们使用生长在 Si(111) 衬底上的 CaF2/CdF2 双势垒谐振隧道二极管 (DBRTD) 结构，展示了具有 105 量级高峰谷比 (PVR) 的室温负微分电阻 (NDR)。为了降低CaF2势垒层的针孔密度，采用分子束外延(MBE)技术在n+-Si(111)衬底上采用分子束外延(MBE)技术生长CdF2量子阱层，并结合部分电离束技术在n+-Si(111)衬底上形成CaF2势垒层。 NDR 峰值电流密度和偏置电压的分散意味着对于具有 18 µm 直径电极的 DBRTD，每个 CaF2 势垒层和 CdF2 量子阱层的层厚度波动被抑制在 (111) 原子平面的 ±1 单位层以下。峰值电流和谷值电流与理论估计得到的结果相当吻合。
We have demonstrated room-temperature negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) on the order of 105 using CaF2/CdF2 double-barrier resonant tunneling diode (DBRTD) structures grown on Si(111) substrates. A CdF2 quantum-well layer was grown by molecular-beam epitaxy (MBE) and CaF2 barrier layers were formed by MBE combined with the partially ionized beam technique on an n+-Si(111) substrate with 0.07° miscut, in order to reduce the pinhole density of CaF2 barrier layers. The dispersion of the peak current density and bias voltage of the NDR implies that the layer thickness fluctuation of each CaF2 barrier and CdF2 quantum-well layer is suppressed below ±1 unit layer of the (111) atomic plane for DBRTDs with an 18 µm diameter electrode. The peak and valley currents agreed reasonably with those obtained by theoretical estimation.