Device structures and carrier transport properties of advanced CMOS using high mobility channels
Device structures and carrier transport properties of advanced CMOS using high mobility channels
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DOI：
10.1016/j.sse.2007.02.017
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发表时间：
2007-04-01
影响因子：
1.7
通讯作者：
Sugahara, S.
中科院分区：
文献类型：
--
作者：
Takagi, S.;Tezuka, T.;Sugahara, S.
目前，移动性增强技术已被认为是未来规模化 MOSFET 的必备技术。本文综述了最新的迁移率增强技术，包括应变应用和新型沟道材料（如SiGe、Ge和III-V族材料）。这些载流子传输增强技术可以分为三类：全局增强技术、局部增强技术和全局/局部合并技术。我们展示了使用这三种技术的 MOSFET 的最新成果，重点是全局应变 Si/SiGe/Ge 衬底以及与本地技术的结合。最后，简要描述了与III-V材料融合的器件结构问题。 (c) 2007 Elsevier Ltd. 保留所有权利。
Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, the recent mobility enhancement technologies including application of strain and new channel materials such as SiGe, Ge and III-V materials are reviewed. These carrier transport enhancement technologies can be classified into three categories; global enhancement techniques, local enhancement techniques and global/local-merged techniques. We present our recent results on MOSFETs using these three types of the technologies with an emphasis on the global strained-Si/SiGe/Ge substrates and the combination with the local techniques. Finally, issues on device structures merged with Ill-V materials are briefly described. (c) 2007 Elsevier Ltd. All rights reserved.