Effect of a ZnO buffer layer on structural and electrical properties of ZnO:Al,P thin films grown by RF magnetron sputtering
Effect of a ZnO buffer layer on structural and electrical properties of ZnO:Al,P thin films grown by RF magnetron sputtering
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DOI：
10.1016/j.ceramint.2017.05.164
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发表时间：
2017-10
影响因子：
5.2
通讯作者：
Seunghak Shin;Changhun Kim;Jung-A Lee;Y. Heo;Joon-Hyung Lee;Jeong-Joo Kim
中科院分区：
文献类型：
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作者：
Seunghak Shin;Changhun Kim;Jung-A Lee;Y. Heo;Joon-Hyung Lee;Jeong-Joo Kim
采用射频磁控溅射法制备了ZnO：Al0.01P0.04薄膜，研究了ZnO缓冲层生长温度对薄膜结构和电学性能的影响。在不同的生长温度下，c面微晶玻璃上的ZnO缓冲层表现出三种不同的ZnO和Al 2 O3的面内取向关系：在200 ℃下的ZnO [10 1 × 0]//Al 2 O 3 [10 1 × 0]，在300 ℃下的ZnO [10 1 × 0]//Al 2 O 3 [10 1 × 0]和ZnO [10 1 × 0]//Al 2 O 3 [11 2 × 0]的混合物，和ZnO [10 1 ∶ 0]//Al 2 O3 [11 2 ∶ 0]。ZnO：Al 0.01 P 0.04薄膜的面内取向遵循ZnO缓冲层的取向，而与其生长温度无关。ZnO：在600° C沉积的ZnO缓冲层上生长的Al 0.01 P 0.04膜具有1.18× 10 16 cm-3的载流子浓度、7.16× 10° cm 2/（Vs）的迁移率和7.36× 10 1 Ω cm的电阻率，表明p型特性。
Structural and electrical properties of ZnO: Al 0.01 P 0.04 thin films were investigated with respect to the growth temperature of the ZnO buffer layers deposited by RF magnetron sputtering. The ZnO buffer layers on c-plane sapphires showed three different types of in-plane orientation relationships between ZnO and Al 2 O 3 at different growth temperatures: ZnO [10 1 ̅ 0]//Al 2 O 3 [10 1 ̅ 0] at 200° C, a mixture of ZnO [10 1 ̅ 0]//Al 2 O 3 [10 1 ̅ 0] and ZnO [10 1 ̅ 0]//Al 2 O 3 [11 2 ̅ 0] at 300° C, and ZnO [10 1 ̅ 0]//Al 2 O 3 [11 2 ̅ 0] at 600° C. The in-plane orientation of the ZnO: Al 0.01 P 0.04 thin film followed the orientation of the ZnO buffer layer regardless of its growth temperature. The ZnO: Al 0.01 P 0.04 film grown on a ZnO buffer layer deposited at 600° C had a carrier concentration of 1.18× 10 16 cm− 3, mobility of 7.16× 10° cm 2/(V s), and resistivity of 7.36× 10 1 Ω cm, indicating p-type characteristics.