DISTRIBUTION AND GENESIS OF INCLUSIONS IN CDTE AND (CD,ZN)TE SINGLE-CRYSTALS GROWN BY THE BRIDGMAN METHOD AND BY THE TRAVELING HEATER METHOD
DISTRIBUTION AND GENESIS OF INCLUSIONS IN CDTE AND (CD,ZN)TE SINGLE-CRYSTALS GROWN BY THE BRIDGMAN METHOD AND BY THE TRAVELING HEATER METHOD
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DOI：
10.1016/0022-0248(94)00617-2
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发表时间：
1995-02-01
影响因子：
1.8
通讯作者：
GROCHOCKI, A
中科院分区：
文献类型：
--
作者：
RUDOLPH, P;ENGEL, A;GROCHOCKI, A
用透射红外显微镜研究了Bridgman法和旅行加热法生长的CdTe和（Cd,Zn）Te晶体中过量成分的包裹体密度和分布。熔体（熔体-溶液）的组成与夹杂物密度之间存在相关性。在镉超压、源温度850℃、熔体温度1118℃的条件下生长出无夹杂的CdTe Bridgman晶体，在微重力条件下从富Te区生长出的（Cd,Zn）Te THM晶体的夹杂密度最高。本文首次详细讨论了包体形成的动力学过程。夹杂物形貌对温度场非常敏感。与生长晶体相反，在非常小的温度梯度下冷却溶液生长的晶体会导致溶液对称地向内结晶，形成被捕获的液滴。在较大的温度梯度下，液滴发生温度梯度区熔化（TGZM）。它们的迁移导致溶解界面{111}面发育，尽管生长界面为圆形。
The density and distribution of inclusions of the excess component in CdTe and (Cd,Zn)Te crystals grown by the Bridgman method and by the travelling heater method (THM) have been investigated by transmission infrared (IR) microscopy. A correlation between composition of the melt (melt-solution) and inclusion density has been found. An inclusion-free CdTe Bridgman crystal was grown using a Cd overpressure, a source temperature of 850 degrees C and a melt temperature of 1118 degrees C. The highest inclusion density was detected in a (Cd,Zn)Te THM crystal grown from a Te-rich zone under microgravity conditions. For the first time the kinetics of the inclusion genesis are discussed in detail. The inclusion morphology is very sensitive to the temperature field. In contrast to as-grown crystals, cooling down solution-grown crystals in a very small temperature gradient causes a symmetrical inwards crystallization of the solution as entrapped droplets. In a large temperature gradient, temperature gradient zone melting (TGZM) of the included droplets occurs. Their migration results in {111} facet development at the dissolving interface, although the growing interface is rounded.