优化背场提高(Al)GaInP太阳电池开路电压
优化背场提高(Al)GaInP太阳电池开路电压
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DOI：
10.1088/1674-4926/37/10/104004
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发表时间：
2016
影响因子：
5.1
通讯作者：
张玮
中科院分区：
文献类型：
--
作者：
陆宏波;李欣益;张玮
GaInPandAlGaInPsolarcellsweregrownbymetalorganicchemicalvapordeposition(MOCVD)，和理论分析表明，异质界面复合速度对电池性能的优化起着重要作用，尤其是基层和背表面场之间的界面。采用晶格匹配生长和伪BSF等方法对BSF进行了优化设计。GaInP和AlGaInP太阳电池中VOC的显著提高表明，我们所采取的措施是有效的，有望在下一代高效太阳电池中提高性能。
GaInPandAlGaInPsolarcellsweregrownbymetalorganicchemicalvapordeposition(MOCVD),and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the opti- mizing of cell performance, especially the interface between base layer and back surface field (BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of Voc in GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells.