Novel Wideband Fully Integrated GaN Power Amplifier Design Using a Hybrid Bandpass-Lowpass Output Matching Network
Novel Wideband Fully Integrated GaN Power Amplifier Design Using a Hybrid Bandpass-Lowpass Output Matching Network
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DOI：
10.1109/lmwt.2023.3281389
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发表时间：
2023-08
期刊：
影响因子：
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通讯作者：
Jie Shi;Wenqi Dai;Xiaohu Fang;Xinyue Zhou;Jiangwei Sui;Jing Xia;K. Cheng
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文献类型：
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作者：
Jie Shi;Wenqi Dai;Xiaohu Fang;Xinyue Zhou;Jiangwei Sui;Jing Xia;K. Cheng
本文提出了一种新型的全集成谐波调谐宽带高效氮化镓功率放大器（PA），用于C波段应用。所提出的PA采用混合带通-低通输出匹配网络（OMN），提供基本阻抗匹配，漏极偏置以及谐波控制，只有两个电感。所提出的PA是采用商业化的0.25~\mu \text{m}$ GaN-on-SiC HEMT工艺设计和制造的。测量结果表明，在3.8-6.4 GHz频段，该放大器可提供38.3-40.2 dBm的饱和输出功率和50%-63%的峰值功率附加效率（PAE），芯片尺寸为1.5\times2.25$ mm2。当被100 MHz 64正交调幅（QAM）信号激励时，在不使用任何数字预失真（DPD）的情况下，所提出的PA在3.8-6.4 GHz范围内可以提供平均PAE >33%，相邻通道功率比（ACPR） $ dBc，误差矢量幅度（EVM）为2.4%-5.1%。
This letter proposes a novel fully integrated harmonic-tuned wideband and high-efficiency GaN power amplifier (PA) for $C$ -band application. The proposed PA employs a hybrid bandpass-lowpass output matching network (OMN) that offers fundamental impedance matching, drain biasing as well as harmonic control with only two inductors. The proposed PA is designed and fabricated using a commercial $0.25~\mu \text{m}$ GaN-on-SiC HEMT process. Measurement results show that, over a frequency band of 3.8–6.4 GHz, this PA can provide a saturation output power of 38.3–40.2 dBm and excellent peak power-added efficiency (PAE) of 50%–63% with a chip size of $1.5\times2.25$ mm2. When excited by a 100 MHz 64-quadrature amplitude modulation (QAM) signal, without using any digital pre-distortion (DPD), the proposed PA can deliver an average PAE >33% with an adjacent channel power ratio (ACPR) $ dBc and an error vector magnitude (EVM) of 2.4%–5.1% over 3.8–6.4 GHz.