Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates
Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates
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DOI：
10.1088/0268-1242/26/7/072001
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发表时间：
2011-07-07
影响因子：
1.9
通讯作者：
de Groot, C. H.
中科院分区：
文献类型：
--
作者：
Abuelgasim, A.;Mallik, K.;de Groot, C. H.
我们表明，深层次掺杂的直拉法生长的硅晶片是能够提供高电阻率的处理晶片适用于射频集成电路。从具有50 Ω cm的标称电阻率的n型直拉硅晶片开始，我们使用离子注入和随后的退火来将晶片的电阻率在室温下增加到超过10 k Ω cm。在1-40 GHz范围内，在注入晶片上制造的共面波导显示出从未注入晶片的0.8 dB mm（-1）到0.3 dB mm（-1）的大幅降低的衰减，提供了明确的证据，表明该技术在GHz范围频率下有效地改善了无源器件的性能。
We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits. Starting from n-type Czochralski silicon wafers having a nominal resistivity of 50 Omega cm, we use ion implantation and subsequent annealing to increase the resistivity of the wafers to over 10 k Omega cm at room temperature. Coplanar waveguides fabricated on implanted wafers show strongly reduced attenuation down to 0.3 dB mm(-1) from 0.8 dB mm(-1) for un-implanted wafers in the 1-40 GHz range, providing clear evidence that the technique is effective in improving performance of passive devices at GHz range frequencies.