Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy
Quantitative voltage measurement of high-frequency internal integrated circuit signals by scanning probe microscopy
复制标题
利用扫描探针显微镜对高频内部集成电路信号进行定量电压测量
DOI:
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发表时间:
2002
期刊:
影响因子:
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通讯作者:
D. Thomson
中科院分区:
文献类型:
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作者:
Z. Weng;C. J. Falkingham;G. Bridges;D. Thomson
This article describes a scanning probe microscopy technique for quantitative high-speed voltage wave form measurement inside an operating integrated circuit. Internal signals are determined by sensing the local electrostatic force on a noncontacting micromachined probe cantilever that is closely positioned above the circuit test point. Amplitude modulation based downconversion is employed to measure repetitive high-frequency signals which can have a bandwidth much greater than the mechanical response of the probe. A force-nulling technique is used to obtain accurate absolute voltages without the need for complex calibration or precise probe positioning, and enables direct measurement of passivated circuits. A method of eliminating dc offset errors, such as that due to material work function differences, is described. Measurement of signals on the passivated interconnects of a wideband distributed amplifier is presented. The instrument demonstrates a voltage accuracy of <30 mV over a dynamic range of 2.5 V.