Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor
Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor
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DOI：
10.1063/1.3026539
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发表时间：
2008-11-17
影响因子：
4
通讯作者：
Hosono, Hideo
中科院分区：
文献类型：
--
作者：
Matsuzaki, Kosuke;Nomura, Kenji;Hosono, Hideo
生长了用于高迁移率p沟道氧化物薄膜晶体管(TFT)的Cu(2)O外延膜。利用氧化镁表面和微调生长条件，得到了空穴迁移率接近90 cm(2)V(-1)S(-1)的单相外延薄膜，与单晶的空穴迁移率(接近100 cm(2)V(-1)S(-1))相当。使用外延薄膜沟道的TFT表现出p沟道工作，尽管场效应迁移率和通断电流比还不能令人满意(分别类似于0.26 cm(2)V(-1)S(-1)和类似于6)。
Cu(2)O epitaxial films were grown for high mobility p-channel oxide thin-film transistors (TFTs). The use of a (110) MgO surface and fine tuning of a growth condition produced single phase epitaxial films with hole Hall mobilities similar to 90 cm(2) V(-1) s(-1) comparable to those of single crystals (similar to 100 cm(2) V(-1) s(-1)). TFTs using the epitaxial film channels exhibited p-channel operation although the field-effect mobilities and the on-to-off current ratio were not yet satisfactory (similar to 0.26 cm(2) V(-1) s(-1) and similar to 6, respectively).