InGaAs-GaAs quantum-dot lasers
InGaAs-GaAs quantum-dot lasers
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DOI：
10.1109/2944.605656
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发表时间：
1997-04-01
影响因子：
4.9
通讯作者：
Ustinov, VM
中科院分区：
文献类型：
--
作者：
Bimberg, D;Kirstaedter, N;Ustinov, VM
量子点（QD）激光器由于其类似于δ的态密度而提供了比量子阱（QW）和QW线激光器更上级的激射特性。在77 K和300 K下分别获得了40A.cm 62 A·cm（-2）的创纪录阈值电流密度，而特征温度保持在385 K直到300 K。内量子效率接近80%。目前，工作的QD激光器显示出宽增益光谱，半峰全宽（FWHM）高达类似于50 meV，非线性材料增益类似于10（5）cm（-1），微分增益类似于10（-13）cm（2），以及强非线性增益效应，增益压缩系数类似于10（-16）cm（3）。调制带宽受到非线性增益效应的限制，但可以通过仔细选择QD和势垒状态之间的能量差来增加，线宽增强因子类似于0.5。InGaAs-GaAs量子点发射波长在300 K时可在0.95 μ m ~ 1.37 μ m之间调谐。
Quantum-dot (QD) lasers provide superior lasing characteristics compared to quantum-well (QW) and QW wire lasers due to their delta like density of states, Record threshold current densities of 40 A.cm(-2) at 77 K and of 62 A.cm(-2) at 300 K are obtained while a characteristic temperature of 385 K is maintained up to 300 K. The internal quantum efficiency approaches values of similar to 80%. Currently, operating QD lasers show broad-gain spectra with full-width at half-maximum (FWHM) up to similar to 50 meV, ultrahigh material gain of similar to 10(5) cm(-1), differential gain of similar to 10(-13) cm(2) and strong nonlinear gain effects with a gain compression coefficient of similar to 10(-16) cm(3). The modulation bandwidth is limited by nonlinear gain effects but can be increased by careful choice of the energy difference between QD and barrier states, The linewidth enhancement factor is similar to 0.5. The InGaAs-GaAs QD emission can be tuned between 0.95 mu m and 1.37 mu m al 300 K.