Effect of Oxygen Partial Pressure on Structure and Dielectric Property of BaTi2O5 Films Prepared by Laser Ablation
Effect of Oxygen Partial Pressure on Structure and Dielectric Property of BaTi2O5 Films Prepared by Laser Ablation
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DOI：
10.2320/matertrans.48.625
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发表时间：
2007-03
影响因子：
1.2
通讯作者：
Chuanbin Wang;R. Tu;T. Goto
中科院分区：
文献类型：
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作者：
Chuanbin Wang;R. Tu;T. Goto
在不同氧分压下，采用激光烧蚀技术在MgO（100）衬底上制备了bati2o5铁电薄膜。研究了PO 2对薄膜的取向、组成、表面形貌和介电性能的影响。Ti与Ba的摩尔比与po2无关，与bati2o5的化学计量组成基本一致。根据PO 2的不同，BaTi 2o5薄膜的取向为（710）和（020）。在po2 = 12.5 Pa时，在MgO（100）衬底上外延生长出具有细长颗粒和垂直交叉结构的（020）取向BaTi 2o5薄膜。在po2 = 12.5 Pa下制备的BaTi 2o5薄膜在750 K时的介电常数达到最大值（e′≈2000）。
BaTi 2 O 5 ferroelectric films were prepared on MgO (100) substrates by laser ablation at various oxygen partial pressures (PO 2 ). The effect of PO 2 on the orientation, composition, surface morphology and dielectric property of the films was investigated. The molar ratio of Ti to Ba was independent of PO 2 , almost in agreement with the stoichiometric composition of BaTi 2 O 5 . The BaTi 2 O 5 films showed the orientation of (710) and (020) depending on PO 2 . At PO 2 = 12.5 Pa, (020) oriented BaTi 2 O 5 film with an elongated granular and perpendicularly crossing texture was epitaxially grown on MgO (100) substrates. The BaTi 2 O 5 film prepared at PO 2 = 12.5 Pa exhibited a sharp permittivity maximum (e' ≈ 2000) at 750 K.