Magnetic ground state of a thin-film element
Magnetic ground state of a thin-film element
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薄膜元件的磁基态
DOI：
10.1109/20.914337
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发表时间：
2000
影响因子：
2.1
通讯作者：
A. Hubert
中科院分区：
文献类型：
--
作者：
W. Rave;A. Hubert
通过三维数值计算，我们研究了矩形坡莫合金薄膜元件中可能的微磁结构。选择的参数与所谓的微磁标准问题1兼容。我们证明，对于这些参数的钻石域模式是最低的能量状态，取代交叉领带模式有利于较大的元素。只有在更小的尺寸下，最初设想的朗道图案才形成基态。过渡到高剩磁结构（或什么将是可比的“单域”状态）被发现的横向尺寸是一个数量级小于基准参数。不同的域模式之间的过渡变得似是而非的能量对称的尼尔壁在扩展薄膜。高剩磁结构的特征可以从电荷均匀分布的原理导出。
By means of three-dimensional numerical calculations we studied possible micromagnetic configurations in a rectangular Permalloy-like thin-film element. The parameters were chosen to be compatible with the so-called micromagnetic standard problem 1. We demonstrate that for these parameters a diamond domain pattern is the lowest energy state that replaces cross-tie patterns favorable in larger elements. Only at smaller sizes does the originally envisaged Landau pattern form the ground state. The transition to high-remanence structures (or what would be comparable to a "single-domain" state) is found for lateral sizes that are an order of magnitude smaller than the benchmark parameters. The transitions among the different domain patterns become plausible in view of the energy of symmetric Neel walls in extended thin films. The features of the high-remanence structures can be derived from the principle of uniform charge distribution.