Investigation of Electrical Properties of InGaN-Based Micro-Light-Emitting Diode Arrays Achieved by Direct Epitaxy
Investigation of Electrical Properties of InGaN-Based Micro-Light-Emitting Diode Arrays Achieved by Direct Epitaxy
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直接外延实现的InGaN基微型发光二极管阵列的电学性能研究
DOI：
10.1002/pssa.202100474
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Esendag V
中科院分区：
文献类型：
--
作者：
Esendag V
采用金属有机化学气相沉积技术在图案化模板上直接外延生长了一系列直径分别为40、5和3.6mInGaN基微发光二极管(μ)阵列样品，并对这些样品进行了系统的研究。这种选择性外延方法可以绕过传统μLED制造方法的主要局限性，因为这些方法不可避免地会引入干法刻蚀引起的损伤。对选择性外延生长的μLED以及使用标准干法刻蚀方法制造的常规μLED进行了电学表征。对于过度生长的μLED，每个μLED的泄漏电流比传统台面刻蚀的μLED的泄漏电流小。值得强调的是，单个3.6 μmμLED在偏置为5 V时的泄漏电流低至14.1nA−5 V。此外，就泄漏电流密度而言，覆盖生长的μLED显示出比台面刻蚀同行更小和更一致的泄漏电流。工作电压RC常量也显示出比传统的台面刻蚀μLED更有利于生长过度的器件。
A systematic study has been conducted on a series of InGaN‐based micro‐light‐emitting diode (μLED) array samples which are achieved using the direct epitaxy overgrown approach on patterned templates by metalorganic chemical vapor deposition technique, where the diameters of the μLEDs are 40, 5, and 3.6 μm, respectively. The selective epitaxy approach allows to circumvent the major limitations of conventional fabrication methods of μLEDs which unavoidably introduce dry‐etching‐induced damages. Electrical characterizations are performed on the selective epitaxy overgrown μLEDs as well as conventional μLEDs fabricated using a standard dry‐etching method. For the overgrown μLEDs, the leakage current per μLED is smaller than those of the conventionally mesa‐etched μLEDs. It is worth highlighting that the single 3.6 μm μLED exhibits as low as a leakage current of 14.1 nA at a bias of −5 V. Moreover, in terms of leakage current density, the overgrown μLEDs exhibit much smaller and more consistent leakage than their mesa‐etched counterparts. Operational voltageRCconstants also show more favorable to the overgrown devices than the conventionally mesa‐etched μLEDs.