Analysis of DC/transient current and RTN behaviors related to traps in p-GaN gate HEMT
Analysis of DC/transient current and RTN behaviors related to traps in p-GaN gate HEMT
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DOI：
10.1109/iedm.2013.6724733
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发表时间：
2013-12
期刊：
影响因子：
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通讯作者：
J. Bae;Sun-Kyu Hwang;Jongmin Shin;H. Kwon;C. Park;Hyoji Choi;Jong-bong Park;Jongseob Kim;J. Ha;Kiyeol Park;Jae-joon Oh;Jaikwang Shin;U. Chung;K. Seo;Jong-Ho Lee
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文献类型：
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作者：
J. Bae;Sun-Kyu Hwang;Jongmin Shin;H. Kwon;C. Park;Hyoji Choi;Jong-bong Park;Jongseob Kim;J. Ha;Kiyeol Park;Jae-joon Oh;Jaikwang Shin;U. Chung;K. Seo;Jong-Ho Lee
据我们所知，首次对p-GaN栅极HEMT中的陷阱相关瞬态特性和RTN进行了表征。基于所提出的模型解释了直流IG的电流传导机理。跃迁传导机制是在VG 0下发生的，似乎是由热离子发射控制，并受浮动基n(W)-p(p-GaN)-n（AlGaN/GaN）双极晶体管作用的影响。瞬态电流行为与直流传导机制有关，可以用p-GaN和AlGaN层中的热发射和电荷捕获来解释。所测栅极电容的瞬态行为与瞬态电流的瞬态行为相对应。通过分析IG和ID中的RTNs，验证了AlGaN层中的空穴捕获和栅极和漏极电流中存在渗透路径。首先提取RTN的陷阱位置和活化能。RTN的时间常数与IG和ID的瞬态行为相似。
Trap-related transient characteristics and RTN in p-GaN gate HEMT were characterized, for the first time to our knowledge. Current conduction mechanism in DC IG is explained based on proposed model. Hopping conduction mechanism is responsible for IG at VG 0 seems to be controlled by thermionic emission and affected by the action of floating-base n(W)-p(p-GaN)-n(AlGaN/GaN) bipolar transistor. Transient current behavior is related to the DC conduction mechanism and could be explained by thermal emission and charge trapping in p-GaN and AlGaN layers. Measured transient behavior of gate capacitance corresponds to that of the transient currents. Hole trapping into the AlGaN layer and existence of percolation path in gate and drain currents are verified by analyzing RTNs in IG and ID. Trap position and activation energy regarding RTN are firstly extracted. RTN time constants are similar to those in IG and ID transient behavior.