CMOS compatible super junction LDMOST with N-buffer layer
CMOS compatible super junction LDMOST with N-buffer layer
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DOI：
10.1109/ispsd.2005.1487976
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发表时间：
2005-05
期刊：
影响因子：
--
通讯作者：
I. Park;C. Salama
中科院分区：
文献类型：
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作者：
I. Park;C. Salama
报道了一种CMOS兼容超结LDMOST（SJ-LDMOST）结构，该结构可减小衬底辅助耗尽效应。所提出的结构在柱和P衬底之间使用N缓冲层，以实现柱、N缓冲层和P衬底之间的电荷补偿。新结构具有高击穿电压、低导通电阻、优良的栅电荷特性和降低的对柱中掺杂不平衡的敏感性。
A CMOS compatible super junction LDMOST (SJ-LDMOST) structure, which reduces substrate-assisted depletion effects, is reported. The proposed structure uses a N-buffer layer between the pillars and the P-substrate to achieve charge compensation between the pillars, the N-buffer layer and the P-substrate. The new structure features high breakdown voltage, low on resistance, excellent gate charge characteristics and reduced sensitivity to doping imbalance in the pillars.