High resolution transmission electron microscope analysis of CdSe/ZnSe strained layer superlattices grown on InP
High resolution transmission electron microscope analysis of CdSe/ZnSe strained layer superlattices grown on InP
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InP 上生长的 CdSe/ZnSe 应变层超晶格的高分辨率透射电子显微镜分析
DOI：
10.1002/1521-3951(200201)229:1
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
T. Matsumoto
中科院分区：
文献类型：
--
作者：
Y. Nabetani;Y. Kobayashi;T. Kato;T. Matsumoto
用高分辨电子显微镜研究了InP衬底上生长的CdSe/ZnSe应变超晶格的晶格结构。通过晶格像分析得到了Cd的组成。Cd的成分沿生长方向被调制。在CdSe/ZnSe界面处，Cd组分呈现出逐渐变化的趋势。应变能计算表明，在界面处形成一层锌镉硒层几乎消除了应变。利用得到的Cd组分的调制轮廓对X射线衍射谱进行了模拟。模拟结果很好地再现了实验观测到的光谱。
The lattice structure of CdSe/ZnSe strained layer superlattices grown on InP is investigated by cross-sectional high resolution electron microscopy. The Cd composition is obtained by lattice image analysis. The Cd composition is modulated along the growth direction. A gradual change of Cd composition is shown at the CdSe/ZnSe interface. The strain energy calculation shows that the formation of a ZnCdSe layer at the interface almost relieves the strain. X-ray diffraction spectra are simulated using the obtained modulation profile of Cd composition. The simulated results well reproduce experimentally observed spectra.