Improvement of Electrical Properties of Silicon Quantum Dot Superlattice Solar Cells with Diffusion Barrier Layers
Improvement of Electrical Properties of Silicon Quantum Dot Superlattice Solar Cells with Diffusion Barrier Layers
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扩散势垒层改善硅量子点超晶格太阳能电池的电性能
DOI：
10.7567/jjap.52.04cr02
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发表时间：
2013
影响因子：
1.5
通讯作者：
M. Konagai
中科院分区：
文献类型：
--
作者：
S. Yamada;Y. Kurokawa;S. Miyajima;M. Konagai
研究了掺铌二氧化钛（TiO 2：Nb）扩散阻挡层对硅量子点超晶格（Si-QDSL）太阳电池性能的影响。插入2 nm厚的TiO 2：Nb层显著减少了在900 °C下热退火期间磷从高掺杂n型层扩散到Si-QDSL层中。发现具有TiO 2：Nb扩散阻挡层的太阳能电池的Si-QDSL层中的磷浓度小于1018 cm-3，这比没有扩散阻挡层的太阳能电池的磷浓度低大约两个数量级。磷浓度的降低导致Si-QDSL层中光生载流子收集的改善。具有扩散阻挡层的太阳能电池的短路电流密度显著提高到1.6mA/cm 2，而没有开路电压和填充因子的劣化。
We investigate the effects of a niobium-doped titanium dioxide (TiO2:Nb) diffusion barrier layer on the performance of silicon quantum dot superlattice (Si-QDSL) solar cells. The insertion of a 2-nm-thick TiO2:Nb layer significantly reduces phosphorus diffusion from a highly doped n-type layer into a Si-QDSL layer during thermal annealing at 900 °C. The phosphorous concentration in the Si-QDSL layer of the solar cell with the TiO2:Nb diffusion barrier layer was found to be less than 1018 cm-3, which is approximately two orders of magnitude lower than that of the solar cell without the diffusion barrier layer. The reduction in phosphorous concentration leads to the improvement of photo-generated carrier collection in the Si-QDSL layer. The short circuit current density of the solar cell with the diffusion barrier layer was dramatically improved to 1.6 mA/cm2 without the degradation of open circuit voltage and fill factor.
影响因子：
3.2
作者：
Jiang, CW;Green, MA
通讯作者：
Green, MA