The future of ferroelectric field-effect transistor technology
The future of ferroelectric field-effect transistor technology
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DOI：
10.1038/s41928-020-00492-7
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发表时间：
2020-10-01
影响因子：
34.3
通讯作者：
Datta, Suman
中科院分区：
文献类型：
--
作者：
Khan, Asif Islam;Keshavarzi, Ali;Datta, Suman
在氧化物中发现的铁电性与现代半导体制造工艺兼容，如氧化铪，导致了铁电场效应晶体管在先进微电子学中的重新出现。铁电场效应晶体管在晶体管结构中结合铁电材料和半导体。在这样做的过程中，它在单个设备级别上合并了逻辑和内存功能，为新兴的计算模式提供了一些最紧迫的硬件级别需求。在这里，我们研究了铁电场效应晶体管技术在当前嵌入式非易失性存储器应用和未来的内存，仿生和替代计算模型的潜力。我们强调了在先进技术节点中大批量制造所涉及的材料和设备层面的挑战（
The discovery of ferroelectricity in oxides that are compatible with modern semiconductor manufacturing processes, such as hafnium oxide, has led to a re-emergence of the ferroelectric field-effect transistor in advanced microelectronics. A ferroelectric field-effect transistor combines a ferroelectric material with a semiconductor in a transistor structure. In doing so, it merges logic and memory functionalities at the single-device level, delivering some of the most pressing hardware-level demands for emerging computing paradigms. Here, we examine the potential of the ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models. We highlight the material- and device-level challenges involved in high-volume manufacturing in advanced technology nodes (