Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition
Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition
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DOI：
10.1007/s10854-019-02605-1
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发表时间：
2019-11
期刊：
影响因子：
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通讯作者：
Hao Wang;Sannian Song;Zhitang Song;Zhiguo Zhou;Dongning Yao;Shi-Long Lv
中科院分区：
文献类型：
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作者：
Hao Wang;Sannian Song;Zhitang Song;Zhiguo Zhou;Dongning Yao;Shi-Long Lv
Current features of phase change memory (PCM) based on Ge2Sb2Te5(GST) as a non-volatile memory is insufficient to meet the needs of storage class memory (SCM) such as extremely high-density, ultra-fast operating speed and long life cycle. In this study, Ti0.28Sb2Te3(TST) device was fabricated based on atomic layer deposition (ALD) method and used as a phase change material. Due to the fast crystallization and low melting temperature of TST, the set speed can be reduced to 6 ns while the reset voltage can be decreased by 20% compared with GST-based device with the same cell structure. In addition, the ALD-deposited TST alloy showed a good gap-fill capability. These results indicate that the ALD-deposited TST film is a fast and scalable phase-change material applied to SCM.
