Direct-write 3D nanolithography at cryogenic temperatures
Direct-write 3D nanolithography at cryogenic temperatures
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DOI：
10.1088/0957-4484/24/3/035301
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发表时间：
2013-01-25
期刊：
影响因子：
3.5
通讯作者：
Dunn, K. A.
中科院分区：
文献类型：
--
作者：
Bresin, M.;Toth, M.;Dunn, K. A.
采用低温电子束诱导沉积（EBID）技术实现了直接写入三维纳米光刻技术。采用低温冷却和电子束对前体甲基环戊二烯（三甲基）铂（MeCpPtMe3）进行冷凝和暴露。暴露过程通过电子-冷凝相互作用的蒙特卡罗模拟来模拟，用于开发两种制造具有集成间隙的三维自支撑结构的方法。垂直和横向分辨率约为150和22纳米，并确定了限制分辨率和吞吐量的潜在机制。分辨率可以用来换取冷凝物暴露效率，这比传统的室温EBID高出4个数量级。
Direct-write three-dimensional nanolithography is demonstrated using cryogenic electron beam-induced deposition (EBID). Cryogenic cooling and an electron beam were used to condense and expose the precursor methylcyclopentadienyl(trimethyl) platinum (MeCpPtMe3). The exposure process was modeled by Monte Carlo simulations of electron-condensate interactions, which were used to develop two approaches for the fabrication of three-dimensional self-supporting structures with incorporated gaps. Vertical and lateral resolutions of approximately 150 and 22 nm are demonstrated, and underlying mechanisms that limit resolution and throughput are identified. Resolution can be traded off for condensate exposure efficiency, which is shown to be up to four orders of magnitude greater than that of conventional, room temperature EBID.