Intrinsic charge transport on the surface of organic semiconductors
Intrinsic charge transport on the surface of organic semiconductors
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DOI：
10.1103/physrevlett.93.086602
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发表时间：
2004-08-20
影响因子：
8.6
通讯作者：
Gershenson, ME
中科院分区：
文献类型：
--
作者：
Podzorov, V;Menard, E;Gershenson, ME
气隙场效应技术实现了在宽宽度范围内rubrene（C42H28）晶体表面上的固有（不受静态障碍）的二极管运输的实现。这种内在运输的特征是载体迁移率，MU的各向异性和使用冷却的MU生长。 MU的各向异性在低温下的激活状态下消失，其中转运由浅陷阱支配。由X射线辐射引入的深陷阱增加了不影响MU的场效果阈值，这表明填充陷阱不会散射极性。
The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. Anisotropy of mu vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting mu, an indication that the filled traps do not scatter polarons.