The development of silicon carbide as a routine irradiation temperature monitor, and its calibration in a thermal reactor
The development of silicon carbide as a routine irradiation temperature monitor, and its calibration in a thermal reactor
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碳化硅作为常规辐照温度监测仪的开发及其在热反应堆中的校准
DOI：
10.1016/0022-3115(76)90263-4
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发表时间：
1976
影响因子：
3.1
通讯作者：
J. E. Palentine
中科院分区：
文献类型：
--
作者：
J. E. Palentine
已经开发了允许碳化硅温度监测器被评估到已知的统计精度的技术。在热反应堆辐照中对热电偶进行了校准，并使用“辐照”长度变化和辐照后退火作为分析技术确定了未来估计的置信度。这种校准是中子通量依赖的可能性进行了讨论，并确定了快堆校准实验的需要。
Techniques have been developed which allow silicon carbide temperature monitors to be assessed to known statistical accuracy. Monitors have been calibrated against thermocouples in a thermal reactor irradiation, and the confidence of future estimates determined using both “as irradiated” length change and post-irradiation annealing as analytical techniques. The possibility that such calibrations are neutron flux dependent is discussed and the need for a fast reactor calibration experiment identified.