Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor
Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor
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DOI：
10.1063/1.1829773
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发表时间：
2004-12
影响因子：
4
通讯作者：
Moonju Cho;D. Jeong;Jaehoon Park;Hong-bae Park;S. Lee;T. Park;C. Hwang;G. Jang;Jaehack Jeong
中科院分区：
文献类型：
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作者：
Moonju Cho;D. Jeong;Jaehoon Park;Hong-bae Park;S. Lee;T. Park;C. Hwang;G. Jang;Jaehack Jeong
采用原子层沉积(ALD)技术在硅片上沉积了HfO2薄膜，晶片温度为300℃，采用含N的四甲基二甲胺基Hf前驱体(Hf[N(CH3)2]4)，在ALD过程中采用O3代替H2O作为氧化剂，大大改善了HfO2薄膜的介电性能。与以水为氧化剂生长的薄膜相比，该薄膜的碳杂质浓度要小得多，并且具有更多的非晶态性质。随温度变化的漏电流分析表明，以O_3为氧化剂生长的薄膜具有较高的界面隧穿势垒，其漏电流密度比以水为氧化剂生长的薄膜小三个数量级。当电容当量厚度为1.49 nm时，HfO2薄膜的介电常数为24.4，漏电流密度为1.6×10−7A/cm2。
The dielectric properties of HfO2 thin films, which were deposited on Si wafers by an atomic layer deposition (ALD) technique at a wafer temperature of 300 °C using a N-containing, tetrakis dimethylamido hafnium precursor (Hf[N(CH3)2]4), were highly improved by adopting O3 as the oxidant during the ALD instead of H2O. The films contained a much smaller carbon impurity concentration and were of more amorphous nature compared to the films grown using H2O as oxidant. Temperature-dependent leakage current analysis showed that the films grown using O3 as oxidant had a higher interfacial potential barrier for tunneling and the leakage current densities of the as-deposited film were three orders of magnitude smaller than that of the films grown using H2O. The dielectric constant of the HfO2 film was 24.4 and the leakage current density was 1.6×10−7A∕cm2 when the capacitance equivalent thickness was 1.49 nm.