Locally rewritable codes for resistive memories
Locally rewritable codes for resistive memories
复制标题
电阻存储器的本地可重写代码
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
B. Kumar
中科院分区：
文献类型：
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作者：
Yongjune Kim;Abhishek A. Sharma;R. Mateescu;Seung;Z. Bandic;J. Bain;B. Kumar
我们提出了局部可重写代码（LWC）用于受局部可修复代码（LRC）启发的分布式存储系统的电阻存储器。LRC的修复局部性值较小，可以快速修复单个故障节点，因为只需访问一小部分其他节点即可恢复故障节点中丢失的数据。通过使用改写局部性，LWC可以提高电阻式存储器的耐用性和功耗，这是电阻式存储器面临的主要挑战。指出了LRC与LWC之间的对偶性，表明LRC现有的施工方法可以应用于LWC的施工。
We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC enable fast repair of a single failed node since the lost data in the failed node can be recovered by accessing only a small fraction of other nodes. By using rewriting locality, LWC can improve endurance and power consumption which are major challenges for resistive memories. We point out the duality between LRC and LWC, which indicates that existing construction methods of LRC can be applied to construct LWC.