Doping limitations of cubic boron nitride: Effects of unintentional defects on shallow doping
Doping limitations of cubic boron nitride: Effects of unintentional defects on shallow doping
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DOI：
10.1103/physrevb.105.054101
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发表时间：
2021-07
影响因子：
3.7
通讯作者：
Tamanna Joshi;Pankaj Kumar;Bipul Poudyal;S. Russell;P. Manchanda;P. Dev
中科院分区：
文献类型：
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作者：
Tamanna Joshi;Pankaj Kumar;Bipul Poudyal;S. Russell;P. Manchanda;P. Dev
立方氮化硼（cBN）是一种超宽带隙、超硬材料，具有极温、极压应用的潜力。使用cBN的p-n结的原理验证在近三十年前就已得到证实。然而，到目前为止，仍然存在两个未解决的挑战，阻止其在技术中的实际应用：（i）难以生产高质量的cBN膜，以及（ii）难以可控地对其基质进行n掺杂和p掺杂。在这项理论工作中，我们研究了掺杂限制的原因，这是实现基于cBN的电子学的一个尖锐问题。特别是，我们发现，不同的无意中存在的本征和非本征缺陷作为补偿缺陷和/或引入陷阱状态。反过来，这些缺陷及其复合物的存在会影响浅掺杂剂[硅和铍]的掺入以及电子结构特性，这些浅掺杂剂是有意引入到n型和p型掺杂cBN中的。我们的掺杂限制的分析提供了一个路径，找到可控的n-和p-掺杂cBN的解决方案。
Cubic boron nitride (cBN) is an ultra-wide bandgap, super-hard material with potential for extreme-temperature and -pressure applications. A proof-of-principle p-n junction using cBN was demonstrated almost three decades ago. However, to date, there remain two unresolved challenges that prevent its practical use in technologies: (i) it is difficult to produce high-quality cBN films and (ii) it is difficult to controllably n- and p-dope its matrix. In this theoretical work, we study the reasons for doping-limitations, which is an acute issue in realizing cBN-based electronics. In particular, we find that different unintentionally-present intrinsic and extrinsic defects act as compensating defects and/or introduce trap states. In turn, the presence of these defects and their complexes affect the incorporation, as well as the electronic structure properties, of shallow dopants [silicon and beryllium], which are introduced intentionally to n- and p-dope cBN. Our analysis of doping-limitations provides a path towards finding solutions for controllably n- and p-doping cBN.