Transfer printing approach to all-carbon nanoelectronics
Transfer printing approach to all-carbon nanoelectronics
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DOI：
10.1016/j.mee.2011.06.017
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发表时间：
2011-10-01
影响因子：
2.3
通讯作者：
Williams, E. D.
中科院分区：
文献类型：
--
作者：
Sangwan, V. K.;Southard, A.;Williams, E. D.
转移印刷方法用于在大面积透明柔性基板上图案化和组装单片碳纳米管（CNT）薄膜晶体管。在80%透明度下具有薄层电阻1 k Ω sq（-1）的喷刷CNT薄膜被用作电极，并且高质量化学气相沉积（CVD）生长的CNT网络被用作半导体组件。采用转移印刷法在聚对苯二甲酸乙二醇酯（PET）基片上预图案化和组装薄膜晶体管，PET基片上含有Al 2 O3/聚甲基丙烯酸甲酯（PMMA）介电层。CNT基双极器件表现出1-33 cm（2）/V s范围内的场效应迁移率和类似于10（3）的开/关比，与使用Au作为电极材料制造的对照器件相当。(C)2011 Elsevier B. V.保留所有权利。
Transfer printing methods are used to pattern and assemble monolithic carbon nanotube (CNT) thin-film transistors on large-area transparent, flexible substrates. Airbrushed CNT thin-films with sheet resistance 1 k Omega sq(-1) at 80% transparency were used as electrodes, and high quality chemical vapor deposition (CVD)-grown CNT networks were used as the semiconductor component. Transfer printing was used to pre-pattern and assemble thin film transistors on polyethylene terephthalate (PET) substrates which incorporated Al2O3/poly-methylmethacrylate (PMMA) dielectric hi-layer. CNT-based ambipolar devices exhibit field-effect mobility in range 1-33 cm(2)/V s and on/off ratio similar to 10(3), comparable to the control devices fabricated using Au as the electrode material. (C) 2011 Elsevier B.V. All rights reserved.