Growth of high mobility n‐type CdTe by photoassisted molecular beam epitaxy
Growth of high mobility n‐type CdTe by photoassisted molecular beam epitaxy
复制标题
光辅助分子束外延生长高迁移率n型CdTe
DOI：
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发表时间：
1986
期刊：
影响因子：
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通讯作者：
J. Schetzina
中科院分区：
文献类型：
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作者：
R. Bicknell;N. Giles;J. Schetzina
我们报告了成功控制铟 CdTe 薄膜替代掺杂的细节。这些 n 型薄膜是使用光辅助分子束外延新技术制备的，其中基底在沉积过程中受到照明。在本工作中，使用氩离子激光器作为照明源。研究发现，入射光会对薄膜的电性能产生立即且显着的变化。特别是，产生了高度活化的 n 型 CdTe:In 层。
We report details of the successful controlled substitutional doping of CdTe films with indium. These n‐type films were prepared using a new technique, photoassisted molecular beam epitaxy, in which the substrate is illuminated during the deposition process. In the present work, an argon ion laser was used as an illumination source. The incident light was found to produce immediate and significant changes in the electrical properties of the films. In particular, highly activated n‐type CdTe:In layers resulted.