Study for Enhancement of Terahertz Radiation Using GaSb/InAs Heterostructures
Study for Enhancement of Terahertz Radiation Using GaSb/InAs Heterostructures
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GaSb/InAs异质结构增强太赫兹辐射的研究
DOI：
10.1088/1742-6596/906/1/012015
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
and M. Tonouchi
中科院分区：
文献类型：
--
作者：
S. Sasa;Y. Kinoshita;M. Tatsumi;M. Koyama;T. Maemoto;S. Hamauchi;I. Kawayama;and M. Tonouchi
研究了 GaSb/InAs 异质结构，以增强飞秒激光激发的 InAs 薄膜的太赫兹 (THz) 辐射。利用GaSb和InAs之间较大的导带不连续性，GaSb层中激发的电子在注入InAs辐射层时获得大量过剩能量。当通过引入薄的 InAs 盖层来控制表面钉扎位置以减少表面电场时，观察到太赫兹辐射增强了大约两倍。
GaSb/InAs heterostructures were investigated for the enhancement of terahertz (THz) radiation from an InAs thin film excited by a femtosecond laser. Taking advantage of the large conduction band discontinuity between GaSb and InAs, electrons excited in the GaSb layer gain a large excess energy when injected into the InAs radiation layer. Enhancement of the THz radiation by a factor of approximately two was observed when the surface pinning position was controlled to reduce the surface electric field by the introduction of a thin InAs cap layer.