Numerical analysis of flared semiconductor laser amplifiers
Numerical analysis of flared semiconductor laser amplifiers
复制标题
喇叭形半导体激光放大器的数值分析
DOI：
10.1109/3.234467
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发表时间：
1993
影响因子：
2.5
通讯作者：
D. Welch
中科院分区：
文献类型：
--
作者：
R. Lang;A. Hardy;R. Parke;D. Mehuys;S. O’Brien;J. Major;D. Welch
提出了一种考虑增益、折射率饱和效应和热效应的喇叭形半导体光放大器的数值模型。理论近场，远场，和二次相位校正远场。结果表明，喇叭形半导体激光放大器能够获得超过1W CW的相干衍射极限输出功率。>
A numerical model for flared semiconductor optical amplifiers that incorporates the effects of gain and index saturation and thermal effects is presented. Theoretical near fields, far fields, and quadratically phase-corrected far fields are presented. The results indicate that flared semiconductor laser amplifiers are capable of coherent diffraction-limited output powers in excess of 1 W CW. >