Microstructural dependence of electron and hole transport in low-temperature-grown polycrystalline-silicon thin-film solar cells
Microstructural dependence of electron and hole transport in low-temperature-grown polycrystalline-silicon thin-film solar cells
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低温生长多晶硅薄膜太阳能电池中电子和空穴传输的微观结构依赖性
DOI：
10.1063/1.1527979
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发表时间：
2002
影响因子：
4
通讯作者：
Y. Hamakawa
中科院分区：
文献类型：
--
作者：
T. Matsui;R. Muhida;T. Kawamura;T. Toyama;H. Okamoto;T. Yamazaki;S. Honda;H. Takakura;Y. Hamakawa
研究了SiH_4-H_2低温等离子体制备的非掺杂多晶硅薄膜的载流子输运特性。交流电导率测量技术已被应用到具有n-i-n结结构的多晶硅i层，以表征电子电导率沿着生长方向。此外，空穴电导率已被测量与p-i-p结结构。交流电导率的温度依赖性表明，具有相对较低的结晶体积分数（Xc ≤ 50%）的多晶硅薄膜表现出本征特性，而具有高Xc（>50%）的多晶硅薄膜表现出n型特性，激活能小于0.15 eV。在此基础上，讨论了多晶硅太阳电池的微结构、载流子输运和光伏性能之间的关系。
Carrier transport properties of undoped polycrystalline silicon (poly-Si) thin films prepared by SiH4–H2 plasma at low temperature have been investigated. The ac-conductivity measurement technique has been applied to poly-Si i layers with an n-i-n junction structure in order to characterize the electron conductivity along the growth direction. Furthermore, the hole conductivity has been measured with p-i-p junction structures. The temperature dependence of ac conductivity reveals that poly-Si films with relatively low crystalline volume fraction (Xc∼50%) exhibit intrinsic character, while the poly-Si films with high Xc (>50%) exhibit n-type character with activation energies less than 0.15 eV. Based on these results, the relationship among microstructure, carrier transport, and photovoltaic performance of poly-Si solar cells is discussed.