The role of interface states in controlling the electronic structure of Alq3/reactive metal contacts
The role of interface states in controlling the electronic structure of Alq3/reactive metal contacts
复制标题
界面态在控制 Alq3/反应金属接触电子结构中的作用
DOI：
10.1016/s1566-1199(01)00015-5
复制
发表时间：
2001
影响因子：
3.2
通讯作者：
A. Kahn
中科院分区：
文献类型：
--
作者：
Chongfei Shen;A. Kahn
在许多情况下，已经观察到由金属/有机界面的形成引起的间隙状态。然而，这些状态在确定界面的电子结构和载流子注入势垒中所起的作用还没有明确确定。在本文中，我们提供了一个模型的化学诱导的间隙状态在Mg/Alq 3和Al/Alq 3界面的作用，特别是关于偶极势垒和能级弯曲的形成。我们表明，这些国家发挥了决定性的作用，在生产相同的费米能级位置在金属上的有机和有机金属界面。该模型是支持光电发射和电流-电压测量。
Gap states induced by the formation of metal/organic interfaces have been observed in a number of instances. Yet, the role that these states play in determining the electronic structure of the interface and the carrier injection barriers has not been clearly established. In this paper, we provide a model for the role of chemistry-induced gap states at Mg/Alq3and Al/Alq3interfaces, in particular with regard to the formation of dipole barrier and level bending. We show that these states play a defining role in producing identical Fermi level positions at metal-on-organic and organic-on-metal interfaces. The model is supported by photoemission and current–voltage measurements.