Operation of Pulse-Charged Spark Gap Triggered by GaAs Photoconductive Semiconductor Switch
Operation of Pulse-Charged Spark Gap Triggered by GaAs Photoconductive Semiconductor Switch
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DOI：
10.1109/tps.2010.2063039
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发表时间：
2010-08
影响因子：
1.5
通讯作者：
Ming Xu;W. Shi;L. Hou;Weili Ji;Lin Zhang;Huiying Dai
中科院分区：
文献类型：
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作者：
Ming Xu;W. Shi;L. Hou;Weili Ji;Lin Zhang;Huiying Dai
研究了由砷化镓 (GaAs) 光电导半导体开关 (PCSS) 触发的脉冲充电火花隙的工作情况。通过测量流光放电的电流，我们分析了半绝缘GaAs PCSS和火花隙之间的击穿机制。通过不同的间隙结构研究了两种相似的组合设置。结果表明，PCSS 是产生高电流（高达 5.6 kA）或超快脉冲（上升时间为 220 ps、半峰全宽为 400 ps）的良好候选者，并且波形具有良好的再现性。
The operation of a pulse-charged spark gap that is triggered by gallium arsenide (GaAs) photoconductive semiconductor switches (PCSSs) was investigated. By measuring the currents with the streamer discharge, we analyzed the mechanisms of breakdown between the semi-insulating GaAs PCSS and the spark gap. Two similar combination setups were studied by different gap structures. It was shown that the PCSS was a good candidate for generating high current (as high as 5.6 kA) or ultrafast pulse with 220-ps rise time and 400-ps full-width at half-maximum accompanied with good reproducibilities of waveforms.