Study on the Reduction of Thermocapillary Convection of the Single-crystal Growth of Silicon under Microgravity
Study on the Reduction of Thermocapillary Convection of the Single-crystal Growth of Silicon under Microgravity
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发表时间：
2002
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通讯作者：
Li Jie;Yang Gang;M. Ke;Li Wei
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作者：
Li Jie;Yang Gang;M. Ke;Li Wei
在微重力条件下，浮区法生长半导体硅被认为是非常有前途的，但表面张力梯度引起的热毛细对流对晶体质量的影响是相当突出的。提出了一种新的减少熔体流动的方法，即表面切割法。建立了描述有表面切割的半浮区内热毛细对流的数学模型，并用有限元方法对不同表面切割方式下的温度和流场进行了数值模拟。结果表明，适当增加表面切割时间，可以有效地减少熔体的流动，使流动减少70%。
Float-zone method for growth of semi-conductor silicon is considering very promising under microgravity,but the effect of thermocapillary convection induced by surface tension gradient on the crystal quality is quite highlight.In the present work,a nwe method referred to as surface-cut method is suggested to reduce the melt flow.A mathmatical model to describe the thermocapillary convection in a half float-zone with surface-cut is proposed and numerical simulation for the temperature and the flow field under different surface-cut way is conducted using the finite element method.The results show that the effective reduction can be achieved and the flow will be weaked by 70% by proper increase of the surface-cut time.