Preparation of Cu(In,Ga)(S,Se)2 thin films bysequential evaporation and annealing in sulfur atmosphere
Preparation of Cu(In,Ga)(S,Se)2 thin films bysequential evaporation and annealing in sulfur atmosphere
复制标题
硫气氛中连续蒸发退火制备Cu(In,Ga)(S,Se)2薄膜
DOI：
10.1016/j.solmat.2010.05.011
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发表时间：
2011
影响因子：
6.9
通讯作者：
S.Nakamura
中科院分区：
文献类型：
--
作者：
T.Yamaguchi;Y.Asai;N.Oku;S.Niiyama;T.Imanishi;S.Nakamura
将CuGaSe2、CuInSe2、in2se3和ga2se3化合物依次蒸发，然后在H2S气氛中退火，制备出高Ga/III比（约0.8）的Cu(In,Ga)(S,Se)2薄膜。退火温度在400 ~ 500℃之间变化。采用XRF、EPMA、XRD和SEM对样品进行了表征。随着退火温度的升高，薄膜中的S/(S+Se)摩尔比增大，Cu、in和Ga含量基本保持不变。随着退火温度的升高，开路电压增大，短路电流密度减小。采用Ga/(In+Ga)=0.79,S /(S+Se)=0.11的Cu(In,Ga)(S,Se)2薄膜，在400℃退火后的最佳太阳能电池，无ar涂层时，Voc=535mV, Isc=13.3mA/cm2， FF=0.61，效率=4.34%。
Cu(In,Ga)(S,Se)2thin films with high Ga/III ratio (around 0.8) were prepared by sequential evaporation from CuGaSe2, CuInSe2, In2Se3and Ga2Se3compounds and then annealing in H2S gas atmosphere. The annealing temperature was varied from 400 to 500°C. These samples were characterized by means of XRF, EPMA, XRD and SEM. The S/(S+Se) mole ratio in the thin films increased with increase in the annealing temperature, keeping the Cu, In and Ga contents nearly constant. The open circuit voltage increased and the short circuit current density decreased with increase in the annealing temperature. The best solar cell using Cu(In,Ga)(S,Se)2thin film with Ga/(In+Ga)=0.79 and S/(S+Se)=0.11 annealed at 400°C demonstrated Voc=535mV, Isc=13.3mA/cm2, FF=0.61 and efficiency=4.34% without AR-coating.