Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X‐ray (SX) region (10–100 nm)
Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X‐ray (SX) region (10–100 nm)
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真空紫外 (VUV) 和软 X 射线 (SX) 区域（10–100 nm）中基于 GaN 的肖特基紫外探测器的表征
DOI：
10.1002/pssa.200303305
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
K. Tadatomo
中科院分区：
文献类型：
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作者：
A. Motogaito;H. Watanabe;K. Hiramatsu;K. Fukui;Y. Hamamura;K. Tadatomo
首次报道了GaN基透明电极肖特基型紫外探测器从真空紫外（VUV）区到软X射线（SX）区（10-100 nm，124- 12.4eV）的响应谱。由Ti/Au膜的透射率计算出10 nm厚的透明Ni/Au电极在真空紫外和SX区（10-100 eV）的透射率约为0.5-0.7。因此，认为10 nm透明的Ni/Au电极足够薄以将VUV和SX光透射到透明电极中。在SX区（13 nm）的响应度值约为0.05A/W。
Responsivity spectra of GaN based Schottky type ultraviolet (UV) photodetectors with transparent electrode from the Vacuum Ultraviolet (VUV) region to soft X-ray (SX) region (10-100 nm, 124-12.4 eV) are described for the first time. The calculated transmittance of 10 nm-thick transparent Ni/Au electrode from the transmittance of Ti/Au membrane is about 0.5-0.7 in the VUV and SX region (10-100 eV). Thus it is considered that the 10-nm-transparent Ni/Au electrode is thin enough to transmit VUV and SX light into the transparent electrode. The value of responsivity in the SX region (at 13 nm) is about 0.05 A/W.