Synthesis of βGa2O3 nanowires by an MOCVD approach
Synthesis of βGa2O3 nanowires by an MOCVD approach
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DOI：
10.1007/s00339-004-2982-6
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发表时间：
2005-09
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影响因子：
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通讯作者：
H. W. Kim;N. Kim
中科院分区：
文献类型：
--
作者：
H. W. Kim;N. Kim
采用三甲基镓与氧气混合物反应的方法，在Au包覆的Si衬底上制备了单斜晶系氧化镓（β Ga 2 O3）纳米线。β Ga 2 O3纳米线从下到上逐渐变细，直径在10 ~ 200 nm之间，长度为几微米。结果表明，在β Ga 2 O3纳米线的顶端附着有Au纳米颗粒，纳米线的生长过程可能是气-液-固过程。
We have synthesized monoclinic gallium oxide (βGa2O3) nanowires on Au-coated Si substrates by a reaction of a trimethylgallium and oxygen mixture. The βGa2O3nanowires became progressively thinner from bottom to top, with diameters ranging from 10 to 200 nm and lengths of several micrometers. We found that Au-containing nanoparticles were attached to the tips of the βGa2O3nanowires and thus the nanowire growth could be a vapor–liquid–solid process .