Gate tunable magneto-resistance of ultra-thin W Te2 devices
Gate tunable magneto-resistance of ultra-thin W Te2 devices
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DOI：
10.1088/2053-1583/aa613b
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发表时间：
2017-02
期刊：
影响因子：
5.5
通讯作者：
Xin Liu;Zhiran Zhang;Chaoyi Cai;S. Tian;S. Kushwaha;Hong Lu;T. Taniguchi;Kenji Watanabe
中科院分区：
文献类型：
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作者：
Xin Liu;Zhiran Zhang;Chaoyi Cai;S. Tian;S. Kushwaha;Hong Lu;T. Taniguchi;Kenji Watanabe
本文测量了远离电子-空穴平衡的超薄WTe2/BN异质结构的磁阻（MR）。发现这类器件的磁阻变化主要由一个可调参数决定，即电子与空穴之间的不平衡量。我们还发现超薄WTe2器件的磁阻行为可以通过双流体模型很好地捕获。根据该模型，如果超薄样品在保持块状样品中观察到的16.7万cm2 V−1 s−1迁移率的情况下调至中性，则MR的变化可能高达400000%，是已知所有材料中MR的最大潜在变化。我们的研究结果显示了超薄WTe2作为可变磁阻材料在未来的应用前景，如磁场传感器、信息存储和提取设备以及电隔离器。该结果还为超薄WTe2样品的电子结构和大MR的起源提供了重要的见解。
In this work, the magneto-resistance (MR) of ultra-thin WTe2/BN heterostructures far away from electron–hole equilibrium is measured. The change of MR of such devices is found to be determined largely by a single tunable parameter, i.e. the amount of imbalance between electrons and holes. We also found that the magnetoresistive behavior of ultra-thin WTe2 devices is well-captured by a two-fluid model. According to the model, the change of MR could be as large as 400 000%, the largest potential change of MR among all materials known, if the ultra-thin samples are tuned to neutrality when preserving the mobility of 167 000 cm2 V−1 s−1 observed in bulk samples. Our findings show the prospects of ultra-thin WTe2 as a variable magnetoresistance material in future applications such as magnetic field sensors, information storage and extraction devices, and galvanic isolators. The results also provide important insight into the electronic structure and the origin of the large MR in ultra-thin WTe2 samples.